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Microwave Semiconductor - Toshiba Infrastructure Systems & Solutions Corporation

Toshiba Microwave Semiconductor Business Unit provides key devices for highly networked society.With its extensive and outstanding technologies, such as internal matching and power combining for high power FETs, high precision and sophisticated fine pattern process, and module-downsizing, Toshiba microwave semiconductor provides our customers with the best suited solution.

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Microwave Semiconductor - Toshiba Infrastructure Systems & Solutions Corporation | microwave.toshiba.co.jp Reviews

<META> DESCRIPTION

Toshiba Microwave Semiconductor Business Unit provides key devices for highly networked society.With its extensive and outstanding technologies, such as internal matching and power combining for high power FETs, high precision and sophisticated fine pattern process, and module-downsizing, Toshiba microwave semiconductor provides our customers with the best suited solution.

<META> KEYWORDS

1 Toshiba Microwave Semiconductors Device

2 High Power

3 High Reliability

4 High efficiency

5 High Gain

6 Low Distortion

7 Internally Matched

8 Field Effect Transistor

9 Gallium Arsenide

10 Gallium Nitride

CONTENT

Page content here

KEYWORDS ON PAGE

japanese,products index,gan hemt,product catalog,disclaimer,press release,technical article,application note,microwave semiconductor top,c band gaas fets,new products,global network,announcement of pcn,technology,information,fake products alert

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Microwave Semiconductor - Toshiba Infrastructure Systems & Solutions Corporation | microwave.toshiba.co.jp Reviews

https://microwave.toshiba.co.jp

Toshiba Microwave Semiconductor Business Unit provides key devices for highly networked society.With its extensive and outstanding technologies, such as internal matching and power combining for high power FETs, high precision and sophisticated fine pattern process, and module-downsizing, Toshiba microwave semiconductor provides our customers with the best suited solution.

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microwave.toshiba.co.jp

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C-Band Internally Matched Power GaAs FETs : Product Index : Microwave Semiconductor - Infrastructure Systems & Solutions Company : Toshiba

http://microwave.toshiba.co.jp/sis/en/des/micro/prod/prodlist/c.htm

Jump to the main text. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. Products C-band Internally Matched Power GaAs FETs. Check the output power vs. frequency map for your convenience.(. Open this site in another window). PDF file size : 57KB - 681KB. Open this site in another window. Check the output power vs. frequency map for your convenience.(. Open this site in another window). PDF file size : 57KB - 681KB. Open ...

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Medium Power GaAs FETs : Product Index : Microwave Semiconductor - Infrastructure Systems & Solutions Company : Toshiba

http://microwave.toshiba.co.jp/sis/en/des/micro/prod/prodlist/chuden.htm

Thank you for visiting Toshiba website. The page you have visited has been closed. NEW URL : http:/ www.toshiba.co.jp/sis/des/micro/index j.htm. Please change your bookmarks or favorites website.

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Microwave Semiconductor Sitemap : Microwave Products - Infrastructure Systems & Solutions Company : Toshiba

http://microwave.toshiba.co.jp/sis/en/des/micro/sitemap/index.htm

Jump to the main text. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. Fake GaAs FET Alert. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. Fake GaAs FET Alert.

4

Technology : Microwave Semiconductor - Infrastructure Systems & Solutions Company : Toshiba

http://microwave.toshiba.co.jp/sis/en/des/micro/technical/index.htm

Jump to the main text. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. October 09, 2007. Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band. November 13, 2006. Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band. September 12, 2005. Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band. Tokyo-Toshiba Corporation...

5

Event : Microwave Semiconductor - Infrastructure Systems & Solutions Company : Toshiba

http://microwave.toshiba.co.jp/sis/en/des/micro/event/index.htm

Jump to the main text. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. L-,S-Band Partially Matched Power GaAs FETs. Microwave Workshops and Exhibition 2015 (MWE 2015). November 25, 2015 to November 27, 2015. Exhibition Hall-D and Annex Hall, Pacifico Yokohama. International Microwave Symposium 2015. International Microwave Symposium 2015 Detail. Open this site in another window. This links to the outside website.). Toshiba has exhibited new products at IMS2015.

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http://teaustralia.com.au/LineCard/Toshiba.aspx

SENSORS / IMAGE PICKUP DEVICES. GENERAL PURPOSE LOGIC ICs. GENERAL PURPOSE LINEAR ICs.

teaustralia.com.au

Home

http://teaustralia.com.au/Home.aspx

To exhibit new products at IMS2011. 5th - 10th June. Toshiba Microwave Semiconductor Product Guide 2011. Epson Toyocom Corporation, the leader in crystal devices, has developed the world's smallest 32.678kHz crystal oscillator. The maximum dimensions of the new crystal oscillator, known as. Ag102 - Low cost intelligent battery charger for sealed acid batteries. To accomplish our mission, TE's objectives are:. To meet and exceed our customer's expectations. To increase brand recognition.

teaustralia.com.au

Toshiba Microwave Semiconductors

http://teaustralia.com.au/LineCard/ToshibaMicrowaveSemiconductors.aspx

L-, S-Band Internally Matched GaAs FETs. C-Band Internally Matched GaAs FETs. X-, Ku-Band Internally Matched GaAs FETs / GaN HEMT. Medium Power GaAs FETs.

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Jump to the main text. C-Band Internally Matched Power GaAs FETs. X-,Ku-Band Internally Matched Power GaAs FETs. X, Ku-band GaAs FETs. March 27, 2017. March 27, 2017. September 28, 2016. Announcement of PCN (Process/Product Change Notice). September 28, 2016. May 15, 2015. Announcement of PCN (Process/Product Change Notice). May 15, 2015. Announcement of PCN (Process/Product Change Notice). May 15, 2015. June 07, 2011. Open this site in another window. Fake GaAs FET Alert. REACH Certificate of Compliance.

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